Title :
Effect of front hole channel on leakage characteristics of a-Si:H TFTs
Author :
Servati, Peyman ; Nathan, Arokia ; Sazonov, Andrei
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Abstract :
This paper explores, from a theoretical standpoint, the effect of a front hole channel formed by virtue of a negative voltage applied at the gate contact, on leakage characteristics of hydrogenated amorphous silicon (a-Si:H) inverted staggered thin-film transistors (TFTs). Holes are accumulated at the front a-Si:H/a-SiNx:H interface forming a channel, which establishes a conduction path between drain and source when the transistor is in its off-state (VGS<0). The accumulation of holes screens the vertical electric field induced by the gate contact. This screening effect explains the voltage and geometry dependence of the leakage characteristics of the TFT
Keywords :
amorphous semiconductors; electrical contacts; elemental semiconductors; hole density; hole mobility; hydrogen; leakage currents; semiconductor device models; silicon; thin film transistors; Si:H-SiN:H; a-Si:H TFTs; a-Si:H inverted staggered TFTs; channel formation; drain-source conduction path; front a-Si:H/a-SiNx:H interface; front hole channel; front hole channel effect; gate contact; gate contact negative voltage; geometry dependence; hole accumulation; hydrogenated amorphous silicon inverted staggered thin-film transistors; inverted staggered thin-film transistors; leakage characteristics; screening effect; transistor off-state; vertical electric field; voltage dependence; Active matrix liquid crystal displays; Amorphous silicon; Conductivity; Contacts; Fabrication; Leakage current; Switches; Switching circuits; Thin film transistors; Voltage;
Conference_Titel :
Microelectronics, 2000. ICM 2000. Proceedings of the 12th International Conference on
Conference_Location :
Tehran
Print_ISBN :
964-360-057-2
DOI :
10.1109/ICM.2000.916454
