Title :
Physics of fluorine plasma ion implantation for GaN normally-off HEMT technology
Author :
Chen, Kevin J. ; Yuan, L. ; Wang, M.J. ; Chen, H. ; Huang, S. ; Zhou, Q. ; Zhou, C. ; Li, B.K. ; Wang, J.N.
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China
Abstract :
We provide an overview on the underlying physical mechanisms associated with the fluorine plasma ion implantation technology that provides a robust approach to fabricating GaN normally-off transistors. The discussion is based on atomistic modeling and a series of experimental studies including thermal diffusion, positron annihilation spectroscopy, photoconductivity and electroluminescence.
Keywords :
III-V semiconductors; electroluminescence; gallium compounds; high electron mobility transistors; ion implantation; photoconductivity; positron annihilation; semiconductor device models; thermal diffusion; wide band gap semiconductors; GaN; atomistic modeling; electroluminescence; fluorine plasma ion implantation; gallium nitride normally-off transistor fabrication; high electron mobility transistors; normally-off HEMT technology; photoconductivity; positron annihilation spectroscopy; thermal diffusion; Aluminum gallium nitride; Gallium nitride; HEMTs; Ion implantation; Plasmas; Schottky diodes; Thermal stability;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131585
