Physics of fluorine plasma ion implantation for GaN normally-off HEMT technology

Author

Chen, Kevin J. ; Yuan, L. ; Wang, M.J. ; Chen, H. ; Huang, S. ; Zhou, Q. ; Zhou, C. ; Li, B.K. ; Wang, J.N.

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China

fYear

2011

fDate

5-7 Dec. 2011

Abstract

We provide an overview on the underlying physical mechanisms associated with the fluorine plasma ion implantation technology that provides a robust approach to fabricating GaN normally-off transistors. The discussion is based on atomistic modeling and a series of experimental studies including thermal diffusion, positron annihilation spectroscopy, photoconductivity and electroluminescence.

Keywords

III-V semiconductors; electroluminescence; gallium compounds; high electron mobility transistors; ion implantation; photoconductivity; positron annihilation; semiconductor device models; thermal diffusion; wide band gap semiconductors; GaN; atomistic modeling; electroluminescence; fluorine plasma ion implantation; gallium nitride normally-off transistor fabrication; high electron mobility transistors; normally-off HEMT technology; photoconductivity; positron annihilation spectroscopy; thermal diffusion; Aluminum gallium nitride; Gallium nitride; HEMTs; Ion implantation; Plasmas; Schottky diodes; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2011 IEEE International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

978-1-4577-0506-9

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2011.6131585

Filename

6131585