• DocumentCode
    3038232
  • Title

    Study of FIB milling induced damage and contamination on ex-situ lift-out TEM specimen and methodology to reduce the artifacts

  • Author

    Liew Kaeng Nan ; Lee Meng Lung

  • Author_Institution
    United Microelectron. Corp. (Singapore Branch), Ltd., Singapore, Singapore
  • fYear
    2013
  • fDate
    15-19 July 2013
  • Firstpage
    404
  • Lastpage
    407
  • Abstract
    Conventional FIB ex-situ lift-out is the most common technique for TEM specimen preparation. However, the FIB milling induced artifacts limit the TEM image quality. By a novel double cross-sectional lamellae preparation, the sidewall amorphous layers were studied. It was noted excess damage layer and additional redeposition layer were observed on different side of TEM specimen, which induced by ion beam irradiation and redeposition of sputtered material respectively when cutting the TEM specimen free from trench at 0 degree stage tilt. By the bottom cut-first FIB method, the damage layer and redeposition layer were therefore reduced. Real TEM cases have shown that the method offers better TEM image quality compared to that of the samples prepared by normal FIB procedures, while maintaining high TEM sample preparation throughput.
  • Keywords
    contamination; cutting; focused ion beam technology; ion beam effects; milling; sputtering; transmission electron microscopy; FIB ex-situ lift-out; FIB milling induced artifacts; FIB milling induced damage; TEM image quality; TEM sample preparation throughput; TEM specimen preparation; bottom cut-first FIB method; contamination; cutting; damage layer; double cross-sectional lamellae preparation; ex-situ lift-out TEM specimen; ion beam irradiation; ion beam redeposition; normal FIB procedures; real TEM cases; redeposition layer; sidewall amorphous layers; sputtered material; stage tilt; Ion beams; Milling; Radiation effects; Silicon; Surface treatment; Throughput;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
  • Conference_Location
    Suzhou
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4799-1241-4
  • Type

    conf

  • DOI
    10.1109/IPFA.2013.6599190
  • Filename
    6599190