Title :
Characteristics of CMOSFETs with sputter-deposited W/TiN stack gate
Author :
Lee, D.H. ; Joo, S.H. ; Lee, G.H. ; Moon, J. ; Shim, T.E. ; Lee, J.G.
Author_Institution :
Basic Res. Team, Samsung Electron. Co. Ltd., Kyungki, South Korea
Abstract :
W/TiN stack gate has been investigated as a new gate electrode in ULSI CMOSFETs. With the combination of low resistivity of W and Si-midgap workfunction of TiN, very low sheet resistance and the proper characteristics of both types of transistors could be obtained simultaneously. With the deposition of TiN film at high substrate temperature, the breakdown characteristics of gate oxide could be improved considerably. The proper condition of dry etching on this structure has been also obtained.
Keywords :
MOSFET; semiconductor device metallisation; sputtered coatings; titanium compounds; tungsten; TiN film; ULSI CMOSFETs; W-TiN; breakdown; dry etching; high temperature deposition; sheet resistance; sputter-deposited W/TiN stack gate; transistors; workfunction; CMOSFETs; Conductivity; Dry etching; Electric breakdown; Sputtering; Substrates; Surface resistance; Temperature; Tin; Ultra large scale integration;
Conference_Titel :
VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
0-7803-2602-4
DOI :
10.1109/VLSIT.1995.520886
