Title :
One order of magnitude increase in quantum efficiency of PtSi/Si IR detectors
Author :
Raissi, Farshid ; Far, Mansoor Mohtashami
Author_Institution :
Dept. of Electr. Eng., KN Toosi Univ. of Technol., Teheran, Iran
Abstract :
Porous silicon has been used to fabricate Schottky diode IR detectors. Porous p-type silicon with pore sizes of the order of a few microns were covered by Pt using sputtering and after annealing, an increase of about 2 orders of magnitude in quantum efficiency was observed compared to regular Schottky detectors. The exhibited efficiency is about an order of magnitude larger than that reported in the literature. It is assumed that the random nature of the orientation of the pore surfaces have caused the increase
Keywords :
Schottky diodes; annealing; elemental semiconductors; infrared detectors; platinum compounds; porous semiconductors; semiconductor device measurement; silicon; sputter deposition; Pt sputtering; PtSi-Si; PtSi/Si IR detectors; Schottky detectors; Schottky diode IR detectors; annealing; pore size; pore surface orientation; porous p-type silicon; porous silicon; quantum efficiency; Charge carrier processes; Coatings; Etching; Fault detection; Infrared detectors; Radiation detectors; Schottky barriers; Schottky diodes; Silicon radiation detectors; Substrates;
Conference_Titel :
Microelectronics, 2000. ICM 2000. Proceedings of the 12th International Conference on
Conference_Location :
Tehran
Print_ISBN :
964-360-057-2
DOI :
10.1109/ICM.2000.916469
