One order of magnitude increase in quantum efficiency of PtSi/Si IR detectors

Author

Raissi, Farshid ; Far, Mansoor Mohtashami

Author_Institution

Dept. of Electr. Eng., KN Toosi Univ. of Technol., Teheran, Iran

fYear

2000

fDate

2000

Firstpage

321

Lastpage

323

Abstract

Porous silicon has been used to fabricate Schottky diode IR detectors. Porous p-type silicon with pore sizes of the order of a few microns were covered by Pt using sputtering and after annealing, an increase of about 2 orders of magnitude in quantum efficiency was observed compared to regular Schottky detectors. The exhibited efficiency is about an order of magnitude larger than that reported in the literature. It is assumed that the random nature of the orientation of the pore surfaces have caused the increase

Keywords

Schottky diodes; annealing; elemental semiconductors; infrared detectors; platinum compounds; porous semiconductors; semiconductor device measurement; silicon; sputter deposition; Pt sputtering; PtSi-Si; PtSi/Si IR detectors; Schottky detectors; Schottky diode IR detectors; annealing; pore size; pore surface orientation; porous p-type silicon; porous silicon; quantum efficiency; Charge carrier processes; Coatings; Etching; Fault detection; Infrared detectors; Radiation detectors; Schottky barriers; Schottky diodes; Silicon radiation detectors; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2000. ICM 2000. Proceedings of the 12th International Conference on

Conference_Location

Tehran

Print_ISBN

964-360-057-2

Type

conf

DOI

10.1109/ICM.2000.916469

Filename

916469