DocumentCode
3038306
Title
Failure analysis of a 2.5D stacking using μinsert technology
Author
Nowodzinski, Antoine ; Mandrillon, Vincent ; Bouchu, D. ; Franiatte, R. ; Boutry, Herve ; Bloch, D. ; Rousseau, Karine ; Lionel, Chevalier
Author_Institution
LETI, CEA, Grenoble, France
fYear
2013
fDate
15-19 July 2013
Firstpage
427
Lastpage
432
Abstract
Failure analyses on μinsert technology used for 2.5D stacking are carried out after 1000 hours of damp heat test on nickel, copper and gold-nickel μinserts. We show that nickel μinserts are prone to delamination when the force applied on the reported die during bonding process is not homogeneous or lower than an optimal value. After the test, one out of eight tested gold-nickel μinserts is subject to a failure induced by gold-aluminum intermetallic compound growth. These intermetallic compounds engender Kirkendall voids which cause a steady increase of a few tens of percents of the electrical resistance of the gold-nickel μinserts. Failures of copper μinserts are due to residues of the titanium used to protect the copper seed layer before the electroplating step. An improper assembly seems to be the cause of failure in each case and it is easily detectable after the bonding process by measuring the electrical resistance of μinserts.
Keywords
aluminium alloys; bonding processes; delamination; electroplating; failure analysis; gold alloys; μinsert technology; 2.5D stacking; Kirkendall voids; bonding process; copper microinsert failure; copper seed layer; damp heat test; delamination; electrical resistance measurment; electroplating step; failure analysis; gold-aluminum intermetallic compound growth; gold-nickel microinsert; nickel microinsert; optimal value; time 1000 hour; titanium residue; Assembly; Electric variables measurement; Force measurement; Intermetallic; Pressure measurement; Resistance; Resistance heating; 3D; EDX; STEM; bonding; failure analysis; failure mode; insert;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location
Suzhou
ISSN
1946-1542
Print_ISBN
978-1-4799-1241-4
Type
conf
DOI
10.1109/IPFA.2013.6599194
Filename
6599194
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