• DocumentCode
    3038306
  • Title

    Failure analysis of a 2.5D stacking using μinsert technology

  • Author

    Nowodzinski, Antoine ; Mandrillon, Vincent ; Bouchu, D. ; Franiatte, R. ; Boutry, Herve ; Bloch, D. ; Rousseau, Karine ; Lionel, Chevalier

  • Author_Institution
    LETI, CEA, Grenoble, France
  • fYear
    2013
  • fDate
    15-19 July 2013
  • Firstpage
    427
  • Lastpage
    432
  • Abstract
    Failure analyses on μinsert technology used for 2.5D stacking are carried out after 1000 hours of damp heat test on nickel, copper and gold-nickel μinserts. We show that nickel μinserts are prone to delamination when the force applied on the reported die during bonding process is not homogeneous or lower than an optimal value. After the test, one out of eight tested gold-nickel μinserts is subject to a failure induced by gold-aluminum intermetallic compound growth. These intermetallic compounds engender Kirkendall voids which cause a steady increase of a few tens of percents of the electrical resistance of the gold-nickel μinserts. Failures of copper μinserts are due to residues of the titanium used to protect the copper seed layer before the electroplating step. An improper assembly seems to be the cause of failure in each case and it is easily detectable after the bonding process by measuring the electrical resistance of μinserts.
  • Keywords
    aluminium alloys; bonding processes; delamination; electroplating; failure analysis; gold alloys; μinsert technology; 2.5D stacking; Kirkendall voids; bonding process; copper microinsert failure; copper seed layer; damp heat test; delamination; electrical resistance measurment; electroplating step; failure analysis; gold-aluminum intermetallic compound growth; gold-nickel microinsert; nickel microinsert; optimal value; time 1000 hour; titanium residue; Assembly; Electric variables measurement; Force measurement; Intermetallic; Pressure measurement; Resistance; Resistance heating; 3D; EDX; STEM; bonding; failure analysis; failure mode; insert;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
  • Conference_Location
    Suzhou
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4799-1241-4
  • Type

    conf

  • DOI
    10.1109/IPFA.2013.6599194
  • Filename
    6599194