Title :
A failure analysis technique using the Nano Electrostatic field Probe Sensor (NEPS)
Author :
Ito, Satoshi ; Matsumoto, Tad
Author_Institution :
Technol. Grop Konaka Electron., Ogaki, Japan
Abstract :
The laser NEPS (Nano Electrostatic field Probe Sensor) method is one of the techniques to estimate a failing region by imaging the change of the carrier signal that occurs by irradiating the laser beam light to LSI under the non-contact and non-bias source analysis environment. In this announcement, the principle of the NEPS method is explained using a capacitive coupling model, and the laser irradiation position and the most suitable analysis condition of NEPS detecting position is clarified. In addition, the I/O terminal leak defect of the chip LSI products is analyzed by means of the NEPS method, and the result of detected abnormalities by the via contact and the meltdown of the silicon basal plate interface will be shown.
Keywords :
electric sensing devices; electrostatic devices; failure analysis; nanosensors; radiation hardening (electronics); I/O terminal leak defect; LSI; capacitive coupling model; carrier signal; failure analysis technique; laser NEPS; laser beam light; laser irradiation position; nanoelectrostatic field probe sensor; nonbias source analysis; noncontact source analysis; silicon basal plate interface; Electrodes; Failure analysis; Large scale integration; Laser beams; Radiation effects; Semiconductor lasers; Substrates;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599208
