Title :
A 3 mW 1.0 GHz silicon ECL dual-modulus prescaler IC
Author :
Mizuno, M. ; Suzuki, H. ; Ogawa, M. ; Sato, K. ; Ichikawa, H.
Author_Institution :
Fujitsu VLSI Ltd., Kasugai, Japan
Abstract :
The authors describe the Si ECL (emitter coupled logic) 3-mW, 1.0 GHz dual-modulus prescaler (64/65,/128/129) for a 3-V PLL (phase-locked loop) synthesizer system. This prescaler has low power dissipation suitable for automobile telephone, cordless telephone, and cellular radios. To achieve high speed with low power, circuits are fabricated with a 0.2- mu m emitter-based self-aligned with polysilicon electrodes and resistors (ESPER) process. This process features a shallow junction profile, small self-aligned emitter, a walled base, selectively ion-implanted collector, and polysilicon electrodes. The minimum device used for circuits has a 0.2*1.0 mu m/sup 2/ emitter area. These features enable the transistor to attain a maximum cut-off frequency of 28 GHz, 1.7 fF collector-base capacitance, and 2.4 fF emitter-base capacitance.<>
Keywords :
bipolar integrated circuits; elemental semiconductors; emitter-coupled logic; frequency synthesizers; integrated logic circuits; phase-locked loops; scaling circuits; silicon; 0.2 micron; 1 GHz; 1.7 fF; 2.4 fF; 28 GHz; 3 V; 3 mW; ECL; ESPER process; PLL; automobile telephone; cellular radios; collector-base capacitance; cordless telephone; dual-modulus prescaler IC; emitter coupled logic; emitter-base capacitance; emitter-based; low power dissipation; phase-locked loop; polysilicon electrodes; polysilicon resistors; selectively ion-implanted collector; self-aligned emitter; shallow junction profile; synthesizer system; walled base; Capacitance; Coupling circuits; Electrodes; Integrated circuit synthesis; Logic; Phase locked loops; Power dissipation; Silicon; Synthesizers; Telephony;
Conference_Titel :
Solid-State Circuits Conference, 1992. Digest of Technical Papers. 39th ISSCC, 1992 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0573-6
DOI :
10.1109/ISSCC.1992.200425
