Title :
Ultimate-low-k SiOCH film (k=3D1.3) with sufficient modulus (>5 GPa) and ultra-high thermal stability formed by low-temperature pulse-time-modulated neutral-beam-enhanced CVD
Author :
Yasuhara, Shigeo ; Sasaki, Toru ; Shimayama, Tsutomu ; Tajima, Kunitoshi ; Yano, Hisashi ; Kadomura, Shingo ; Yoshimaru, Masaki ; Matsunaga, Noriaki ; Samukawa, Seiji
Author_Institution :
Inst. of Fluid Sci., Tohoku Univ., Sendai, Japan
Abstract :
We investigated a pulse-time-modulated neutral-beam-enhanced CVD at a low substrate temperature of -70°C with dimethoxy-tetramethyl-disiloxane to form low-k SiOCH film. This method provided an ultimate low-k SiOCH film with a k-value of 1.3, a sufficient modulus of more than 5 GPa, and ultra-high thermal stability (no desorption of CH3 and H2O by 400°C annealing). This result is explained by the extremely high polymerization due to a drastic increase in absorption probability of the precursor combined with the pulse-time-modulated neutral beam irradiation and low substrate temperature of -70°C.
Keywords :
chemical vapour deposition; elastic moduli; low-k dielectric thin films; polymerisation; silicon compounds; thermal conductivity; thermal stability; SiOCH film; dimethoxy-tetramethyl-disiloxane; modulus; polymerization; precursor absorption probability; pulse-time-modulated neutral beam irradiation; pulse-time-modulated neutral-beam-enhanced CVD; substrate temperature; temperature -70 degC; ultra-high thermal stability; Annealing; Electromagnetic wave absorption; Plasma temperature; Polymer films; Semiconductor films; Substrates; Surface resistance; Temperature distribution; Thermal stability; Thickness measurement;
Conference_Titel :
Interconnect Technology Conference (IITC), 2010 International
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4244-7676-3
DOI :
10.1109/IITC.2010.5510729
