• DocumentCode
    3038720
  • Title

    The potential of carbon-based memory systems

  • Author

    Brehob, Mark ; Enbody, Richard ; Kwon, Young-Kyun ; Tománek, David

  • Author_Institution
    Dept. of Comput. Sci. & Eng., Michigan State Univ., East Lansing, MI, USA
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    110
  • Lastpage
    114
  • Abstract
    It seems likely that density concerns will force the DRAM community to consider using radically different schemes for the implementation of memory devices. We propose using nano-scale carbon structures as the basis for a memory device. A single-wall carbon nanotube would contain a charged buckyball. That buckyball will stick tightly to one end of the tube or the other. We assign the bit value of the device depending on which side of the tube the ball is. The result is a high-speed, non-volatile bit of memory. We propose a number of schemes for the interconnection of these devices and examine some of the known electrical issues
  • Keywords
    carbon nanotubes; integrated circuit interconnections; random-access storage; C; DRAM community; RAM; bit value; charged buckyball; electrical issues; high-speed nonvolatile memory bit; interconnection; memory device; memory systems; nano-scale C structures; nanomemory device; single-wall C nanotube; Astronomy; Computer science; Nanoscale devices; Nonvolatile memory; Physics; Quantum dots; Random access memory; Research and development; Strips; Submillimeter wave technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Memory Technology, Design and Testing, 1999. Records of the 1999 IEEE International Workshop on
  • Conference_Location
    San Jose, CA
  • ISSN
    1087-4852
  • Print_ISBN
    0-7695-0259-8
  • Type

    conf

  • DOI
    10.1109/MTDT.1999.782691
  • Filename
    782691