DocumentCode
3038720
Title
The potential of carbon-based memory systems
Author
Brehob, Mark ; Enbody, Richard ; Kwon, Young-Kyun ; Tománek, David
Author_Institution
Dept. of Comput. Sci. & Eng., Michigan State Univ., East Lansing, MI, USA
fYear
1999
fDate
1999
Firstpage
110
Lastpage
114
Abstract
It seems likely that density concerns will force the DRAM community to consider using radically different schemes for the implementation of memory devices. We propose using nano-scale carbon structures as the basis for a memory device. A single-wall carbon nanotube would contain a charged buckyball. That buckyball will stick tightly to one end of the tube or the other. We assign the bit value of the device depending on which side of the tube the ball is. The result is a high-speed, non-volatile bit of memory. We propose a number of schemes for the interconnection of these devices and examine some of the known electrical issues
Keywords
carbon nanotubes; integrated circuit interconnections; random-access storage; C; DRAM community; RAM; bit value; charged buckyball; electrical issues; high-speed nonvolatile memory bit; interconnection; memory device; memory systems; nano-scale C structures; nanomemory device; single-wall C nanotube; Astronomy; Computer science; Nanoscale devices; Nonvolatile memory; Physics; Quantum dots; Random access memory; Research and development; Strips; Submillimeter wave technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Memory Technology, Design and Testing, 1999. Records of the 1999 IEEE International Workshop on
Conference_Location
San Jose, CA
ISSN
1087-4852
Print_ISBN
0-7695-0259-8
Type
conf
DOI
10.1109/MTDT.1999.782691
Filename
782691
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