Title :
The worst stress condition of hot carrier degradation on high voltage LDMOSFET
Author :
Huayang, Sarah Zhou ; Yongliang Song ; Zhuo Song ; Yanju, Lisa Yu ; Yong, Atman Zhao ; Wu, Junyong ; Chang, V. ; Chien, Kary
Author_Institution :
Semicond. Manuf. Int. Corp., Shanghai, China
Abstract :
This paper reports the research of applying the worst stress condition of thick gate oxide LDMOSFET hot carrier reliability. Based on electrical characteristic and hot carrier degradation investigation, the worst stress condition selection and failure mechanism are discussed and then the reasonable stress condition is proposed in this paper.
Keywords :
MOSFET; failure analysis; hot carriers; semiconductor device reliability; stress effects; electrical characteristic; failure mechanism; high voltage LDMOSFET; hot carrier degradation; hot carrier reliability; thick gate oxide LDMOSFET; worst stress condition selection; Degradation; Hot carriers; Human computer interaction; Logic gates; Stress; Substrates; Voltage measurement;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599255
