• DocumentCode
    3040046
  • Title

    Using strain to increase the reliability of scaled spin MOSFETs

  • Author

    Osintsev, Dmitri ; Sverdlov, Viktor ; Makarov, A. ; Selberherr, Siegfried

  • Author_Institution
    Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
  • fYear
    2013
  • fDate
    15-19 July 2013
  • Firstpage
    762
  • Lastpage
    765
  • Abstract
    We investigate the surface roughness induced spin relaxation in scaled spin MOSFETs. We show that the spin-flip hot spots characterized by strong spin relaxation appear in thin MOSFET channel. Strain can efficiently move these hot spots outside of the states occupied by carriers, resulting in a substantial increase of the spin lifetime.
  • Keywords
    MOSFET; integrated circuit reliability; silicon-on-insulator; surface roughness; scaled spin MOSFET reliability; spin lifetime; spin-flip hot spots; strain; surface roughness induced spin relaxation; thin MOSFET channel; ultra-scaled SOI MOSFET; DVD; Decision support systems; Failure analysis; Integrated circuits; phonon relaxation; shear strain; surface-roughness relaxation; ultra-scaled SOI MOSFETs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
  • Conference_Location
    Suzhou
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4799-1241-4
  • Type

    conf

  • DOI
    10.1109/IPFA.2013.6599272
  • Filename
    6599272
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3040046