A new Ge2Sb2Te5 (GST) liner stressor featuring stress enhancement due to amorphous-crystalline phase change for sub-20 nm p-channel FinFETs

Author

Ding, Yinjie ; Cheng, Ran ; Koh, Shao-Ming ; Liu, Bin ; Gyanathan, Ashvini ; Zhou, Qian ; Tong, Yi ; Lim, Phyllis Shi-Ya ; Han, Genquan ; Yeo, Yee-Chia

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore (NUS), Singapore, Singapore

fYear

2011

fDate

5-7 Dec. 2011

Abstract

We report the first demonstration of a novel Ge₂Sb₂Te₅ (GST) liner stressor which can be shrunk or contracted (in volume) during phase-change to realize performance enhancement in p-channel FinFETs. FinFETs with ultra-scaled gate length down to ~4.5 nm were used. Amorphous GST (α-GST) liner has intrinsic stress that increases the p-FinFET drive current as compared to unstrained control devices. Further, when the a-GST changes phase to crystalline GST (c-GST), the GST liner contracts, leading to very high channel stress and drive current enhancement.

Keywords

MOSFET; crystallisation; GST liner stressor; Ge₂Sb₂Te₅; amorphous-crystalline phase change; drive current enhancement; p-FinFET drive current; p-channel FinFET; performance enhancement; stress enhancement; unstrained control devices; Compressive stress; Crystallization; FinFETs; Logic gates; Silicon; Strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2011 IEEE International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

978-1-4577-0506-9

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2011.6131678

Filename

6131678