Novel technique to engineer aluminum profile at nickel-silicide/Silicon:Carbon interface for contact resistance reduction, and integration in strained N-MOSFETs with silicon-carbon stressors

Author

Koh, Shao-Ming ; Zhou, Qian ; Thanigaivelan, Thirumal ; Henry, Todd ; Samudra, Ganesh S. ; Yeo, Yee-Chia

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore (NUS), Singapore, Singapore

fYear

2011

fDate

5-7 Dec. 2011

Abstract

We report a new technique of achieving reduced nickel silicide contact resistance in strained n-FETs, where a pre-silicide Aluminum (Al) implant was introduced, and the Al profile was controlled/engineered by Carbon (C). C suppresses Al diffusion during silicidation, hence retaining high concentration of Al within the NiSi. Incorporating Al within NiSi reduces the Schottky barrier height for n-Si:C contact, leading to 18 % I_On improvement for Si:C S/D nFETs with no compromise on short channel effects.

Keywords

MOSFET; aluminium; carbon; contact resistance; doping profiles; elemental semiconductors; nickel alloys; semiconductor doping; silicon; silicon alloys; NiSi-Si:C,Al; contact resistance reduction; novel technique; presilicide aluminum implant; short channel effect; silicidation; silicon-carbon stressor; strained N-MOSFET; Films; Implants; Logic gates; Nickel; Schottky barriers; Silicidation; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2011 IEEE International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

978-1-4577-0506-9

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2011.6131681

Filename

6131681