DocumentCode
3040544
Title
Spot-size expanded high efficiency 1.3 μm MQW laser diodes with laterally tapered active stripe
Author
Uda, A. ; Tsuruoka, K. ; Suzuki, N. ; Fukushima, K. ; Nakamura, T. ; Torikai, T.
Author_Institution
Kansai Electron. Res. Lab., NEC Corp., Shiga, Japan
fYear
1997
fDate
11-15 May 1997
Firstpage
657
Lastpage
660
Abstract
A large spot-size laser diode (LD) with tapered active stripe has been realized. The threshold current and the slope efficiency were 14 mA and 0.43 W/A, respectively at 85°C. These characteristics are comparable to those of conventional straight stripe LDs. The full width at half maximum (FWHM) of lateral and vertical far field patterns (FFPs) were 14° and 16°, respectively. The maximum coupling efficiency of the tapered LD to a 10 μm φ-core single mode fiber was -6.2 dB and horizontal 1 dB-down tolerance was ±2.0 μm
Keywords
quantum well lasers; 1.3 micron; 14 mA; 85 C; coupling efficiency; far field pattern; horizontal tolerance; laterally tapered active stripe; single mode fiber; slope efficiency; spot-size expanded MQW laser diode; threshold current; Chemicals; Diode lasers; Epitaxial growth; Epitaxial layers; Etching; Power generation; Quantum well devices; Substrates; Temperature; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location
Cape Cod, MA
ISSN
1092-8669
Print_ISBN
0-7803-3898-7
Type
conf
DOI
10.1109/ICIPRM.1997.600259
Filename
600259
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