DocumentCode :
3041365
Title :
CMOS and MEMS process investigation
Author :
Whipple, Tony ; Cibuzar, Greg
Author_Institution :
Microtechnol. Lab., Minnesota Univ., Minneapolis, MN, USA
fYear :
1999
fDate :
1999
Firstpage :
161
Lastpage :
164
Abstract :
As MEMS technology matures as an industry, the integration of standard integrated circuit and MEMS devices will continue to increase. Presented is a brief overview of the work that others have done to solve these problems using hybrid, monolithic, or bonding techniques. Also presented are some of the problems that need to be overcome in having both processes on the same substrate, such as avoiding any contamination of the MOS circuit by normal MEMS processing steps. Previous work at the University of Minnesota Microtechnology Laboratory has demonstrated NMOS/CMOS or MEMS devices using the MTL facility. In this work we present simulation and test results, along with a proposed process that includes CMOS and MEMS devices on the substrate
Keywords :
CMOS integrated circuits; integrated circuit modelling; micromechanical devices; CMOS; LPCVD; MEMS; NMOS; diffusion; simulation; Bonding; CMOS process; CMOS technology; Circuit simulation; Contamination; Integrated circuit technology; Laboratories; MOS devices; Microelectromechanical devices; Micromechanical devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1999. Proceedings of the Thirteenth Biennial
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-5240-8
Type :
conf
DOI :
10.1109/UGIM.1999.782845
Filename :
782845
Link To Document :
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