Title :
Fabrication of 30nm T-Gate High Electron Mobility Transistors Using a Bi-Layer of PMMA and UVIII
Author :
Boyd, E. ; Zhou, H. ; McLelland, H. ; Moran, D.A.J. ; Thoms, S. ; Thayne, I.G.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ.
Abstract :
This work reports on the development and fabrication of high electron mobility transistors with a gate length of less than 30 nm. The T-shaped gates were realized using a two-stage "bi-lithography" process that creates a T-shaped image in a bi-layer of PMMA and UVIII. This is then transferred into SiO2 gate support layer by a low damage dry-etch process. This method enables the fabrication of mechanically robust, ultra short T-gates to be realised
Keywords :
etching; high electron mobility transistors; lithography; silicon compounds; 30 nm; PMMA; SiO2; SiO2 gate support layer; T-gate; UVIII; bilithography; dry etch; high electron mobility transistors; Capacitive sensors; Cutoff frequency; Electrons; Fabrication; HEMTs; Indium phosphide; Lattices; MODFETs; Noise robustness; Space technology;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on
Conference_Location :
Brisbane, Qld.
Print_ISBN :
0-7803-8820-8
DOI :
10.1109/COMMAD.2004.1577483
