Femtosecond Nonlinear Coherence Spectroscopy of the Blue Band of GaN

Author

Van Dao, Lap ; Do, My Thi Tra ; Eckle, Petrissa ; Hannaford, Peter

Author_Institution

Centre for Atom Opt. & Ultrafast Spectrosc., Swinburne Univ. of Technol., Melbourne, Vic.

fYear

2004

fDate

8-8 Dec. 2004

Firstpage

61

Lastpage

64

Abstract

The nonlinear optical properties of an undoped GaN epitaxial layer have been investigated in the spectral region 400 - 450 nm using two-colour multiple-pulse photon echo measurements. Variation of the laser wavelengths and pulse sequence and the use of spectrally resolved measurements allows us to study the dephasing of the donors and acceptors and the energy relaxation properties for the blue band of GaN

Keywords

III-V semiconductors; gallium compounds; high-speed optical techniques; nonlinear optics; photon echo; semiconductor epitaxial layers; wide band gap semiconductors; 400 to 450 nm; GaN; energy relaxation; femtosecond nonlinear coherence spectroscopy; nonlinear optical properties; two-colour multiple-pulse photon echo; undoped GaN epitaxial layer; Coherence; Energy resolution; Epitaxial layers; Gallium nitride; Nonlinear optics; Optical pulses; Pulse measurements; Spectroscopy; Ultrafast optics; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on

Conference_Location

Brisbane, Qld.

Print_ISBN

0-7803-8820-8

Type

conf

DOI

10.1109/COMMAD.2004.1577492

Filename

1577492