A modified charge-control model for HEMTs

Author

Aziz, M. Abdel ; El-Banna, M.

Author_Institution

Air Defence Coll., Cairo, Egypt

fYear

1996

fDate

19-21 Mar 1996

Firstpage

547

Lastpage

554

Abstract

A modified model for the charge control in HEMT devices is presented. The model is based on the solution of Poisson´s equation in the AlGaAs layer using an accurate numerical method. The model assumes a non-uniform ionized donor concentration, this nonuniformity is assumed to follow the Fermi-Dirac statistics. The free carrier concentration in AlGaAs is deduced from the drift/diffusion equation assuming zero current density at the heterointerface. The obtained results have been compared with other models. The effects of structural and processing parameters on the charge control mechanism are extensively examined and optimization of these parameters for design of high performance devices are also discussed

Keywords

III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; high electron mobility transistors; semiconductor device models; AlGaAs; Fermi-Dirac statistics; HEMT; Poisson equation; charge-control model; drift/diffusion equation; free carrier concentration; nonuniform ionized donor concentration; Digital circuits; Educational institutions; Electrons; Equations; HEMTs; MODFET circuits; Potential well; Statistics; Tiles; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Science Conference, 1996. NRSC '96., Thirteenth National

Conference_Location

Cairo

Print_ISBN

0-7803-3656-9

Type

conf

DOI

10.1109/NRSC.1996.551144

Filename

551144