DocumentCode :
3042639
Title :
Damage-Free Plasma Etching Processes for Future Nanoscale Devices
Author :
Samukawa, S.
Author_Institution :
Inst. of Fluid Sci., Tohoku Univ., Sendai
fYear :
2009
fDate :
25-29 Jan. 2009
Firstpage :
112
Lastpage :
119
Abstract :
For the past 30 years, plasma etching technology has led in the efforts to shrink the pattern size of ultra-large-scale integrated (ULSI) devices. However, inherent problems in the plasma processes, such as charge buildup and UV photon radiation, limit the etching performance for nanoscale devices. To overcome these problems and fabricate sub-10-nm devices in practice, neutral-beam etching has been proposed. In this paper, we introduce the ultimate etching processes using neutral-beam sources and discuss the fusion of top-down and bottom-up processing for future nanoscale devices. Neutral beams can perform atomically damage-free etching and surface modification of inorganic and organic materials. This technique is a promising candidate for the practical fabrication technology for future nano-devices.
Keywords :
ULSI; nanoelectronics; sputter etching; UV photon radiation; charge buildup; damage-free plasma etching; etching performance; nanoscale devices; neutral beam etching; neutral beam sources; pattern size; plasma etching technology; ultimate etching process; ultra-large-scale integrated devices; Apertures; Etching; Nanoscale devices; Nuclear and plasma sciences; Particle beams; Plasma applications; Plasma devices; Plasma sources; Plasma x-ray sources; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2009. MEMS 2009. IEEE 22nd International Conference on
Conference_Location :
Sorrento
ISSN :
1084-6999
Print_ISBN :
978-1-4244-2977-6
Electronic_ISBN :
1084-6999
Type :
conf
DOI :
10.1109/MEMSYS.2009.4805332
Filename :
4805332
Link To Document :
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