Title :
Guard-Ring Electrode Effects on Crosstalk in Simulated 2D CMOS Compatible Vertical Photodiode Pixel Arrays
Author :
Jansz-Dravetzky, P. ; Hinckley, S.
Author_Institution :
Centre for Excellence for MicroPhotonic Syst., Edith Cowan Univ., Joondalup, WA
Abstract :
In this study, we have simulated the electrical crosstalk in back-illuminated and front-illuminated photodiode arrays as a function of substrate thickness and junction depth for single junction photodiode pixels, with and without guard-ring electrodes. The physical mechanisms responsible for electrical crosstalk suppression are explained using an absorption volume proportion concept. The results obtained show that significant crosstalk suppression can be achieved for back-illuminated thin substrate guarded-pixel arrays
Keywords :
CMOS image sensors; crosstalk; electrodes; integrated optoelectronics; photodiodes; absorption volume proportion; back-illuminated photodiode arrays; crosstalk suppression; electrical crosstalk; front-illuminated photodiode arrays; guard-ring electrode effects; guarded-pixel arrays; junction depth; simulated 2D CMOS; single junction photodiode pixels; substrate thickness; vertical photodiode pixel arrays; Absorption; Cathodes; Crosstalk; Doping; Electrodes; Image resolution; Lighting; Photodiodes; Pixel; Thyristors; CMOS; Crosstalk; guard-ring electrode; pixel array; simulation; single-junction; vertical photodiode;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on
Conference_Location :
Brisbane, Qld.
Print_ISBN :
0-7803-8820-8
DOI :
10.1109/COMMAD.2004.1577550
