Photothermopower of amorphous semiconductors [thermophotovoltaics]

Author

Chiu, Dirk M.

Author_Institution

Dept. of Electr. & Electron. Eng., Victoria Univ. of Technol., Melbourne, Vic., Australia

Volume

2

fYear

1996

fDate

11-16 Aug 1996

Firstpage

1023

Abstract

Photothermopower and photoconductivity measurements on amorphous chalcogenides and silicon indicate that for chalcogenides, both electrons and holes contribute significantly to the conduction process, and junction fabrication is possible provided that the doping process is well-controlled. For the case of amorphous silicon, condition of sample preparation as well as impurity selectivity are important

Keywords

amorphous semiconductors; elemental semiconductors; p-n junctions; photoconductivity; photovoltaic cells; semiconductor device models; semiconductor device testing; semiconductor doping; solar cells; Si; amorphous chalcogenides; amorphous silicon; conduction process; doping process; electrons; holes; impurity selectivity; junction fabrication; photoconductivity measurements; photothermopower measurements; sample preparation; thermophotovoltaics; Amorphous materials; Amorphous semiconductors; Amorphous silicon; Charge carrier processes; Conducting materials; Fabrication; Photoconductivity; Temperature; Thermal conductivity; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Energy Conversion Engineering Conference, 1996. IECEC 96., Proceedings of the 31st Intersociety

Conference_Location

Washington, DC

ISSN

1089-3547

Print_ISBN

0-7803-3547-3

Type

conf

DOI

10.1109/IECEC.1996.553839

Filename

553839