Title :
Time Resolved and Time Integrated Photoluminescence for Study of Optical Properties of Silicon Quantum Dots
Author :
Lap Van Dao ; Xiaoming Wen ; My Thi Tra Do ; Hannaford, P. ; Eun-Chel Cho ; Cho, Y.H. ; Yidan Huang ; Green, M.A.
Author_Institution :
Centre for Atom Opt. & Ultrafast Spectrosc., Swinburne Univ. of Technol., Melbourne, Vic.
Abstract :
In this paper we report studies of the optical properties of silicon quantum dot structures. From time-resolved and time-integrated photoluminescence measurements we investigate the state-filling effect and carrier lifetime and discuss the parabolic confinement of quantum dot structures. The photoluminescence intensities for different quantum dot levels decay with a stretched exponential function and the decay times are in the range 2 - 60 μs
Keywords :
carrier lifetime; elemental semiconductors; photoluminescence; semiconductor quantum dots; silicon; time resolved spectra; 2 to 60 mus; carrier lifetime; optical properties; parabolic confinement; photoluminescence intensities; quantum dot levels; silicon quantum dots; state-filling effect; stretched exponential function; time integrated photoluminescence; time resolved photoluminescence; Atom optics; Integrated optics; Photoluminescence; Potential well; Quantum dot lasers; Quantum dots; Silicon; Spectroscopy; US Department of Transportation; Ultrafast optics; Laser spectroscopy; Optical properties of low-dimensional structures; Photoluminescence;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on
Conference_Location :
Brisbane, Qld.
Print_ISBN :
0-7803-8820-8
DOI :
10.1109/COMMAD.2004.1577567
