Properties of high-power Cryo-MOSFETs

Author

Mueller, Otward

Author_Institution

American Superconductor Corp., Westborough, MA, USA

Volume

3

fYear

1996

fDate

6-10 Oct 1996

Firstpage

1443

Abstract

At cryogenic temperatures MOS field-effect high-voltage power transistors behave as super-semiconductor switches (Cryo-MOSFET). Important parameters such as on-resistance, breakdown voltage, thermal resistance, SOA, etc., of 500-1000 V power Cryo-MOSFETs operated in liquid nitrogen (LN2, T=77 K) at drain currents in the 10-100 A range have been measured. The results are reported. FREDFETs are also discussed

Keywords

cryogenic electronics; electric breakdown; electric resistance; field effect transistor switches; power MOSFET; thermal resistance; 10 to 100 A; 500 to 1000 V; 77 K; FREDFET; MOS field-effect high-voltage power transistors; breakdown voltage; cryogenic temperatures; drain currents; high-power Cryo-MOSFET; liquid nitrogen; on-resistance; safe operating area; super-semiconductor switches; thermal resistance; Cryogenics; Current measurement; Electrical resistance measurement; Nitrogen; Power measurement; Power transistors; Semiconductor optical amplifiers; Switches; Temperature; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 1996. Thirty-First IAS Annual Meeting, IAS '96., Conference Record of the 1996 IEEE

Conference_Location

San Diego, CA

ISSN

0197-2618

Print_ISBN

0-7803-3544-9

Type

conf

DOI

10.1109/IAS.1996.559256

Filename

559256