An SCR-GTO model designed for a basic level of model performance

Author

Wong, K.Y. ; Lauritzen, P.O. ; Venkata, S.S. ; Sundaram, A. ; Adapa, R.

Author_Institution

Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA

Volume

3

fYear

1996

fDate

6-10 Oct 1996

Firstpage

1517

Abstract

The SCR-GTO model in this paper is specifically designed to meet the performance features proposed for the basic performance level. An innovative and unique quasi-physical modeling technique combines a behavioral switch model and a physical diode model to avoid the convergence difficulties which can occur when regenerative thyristor models are used. A standard benchmark circuit is proposed for validating the switching performance of SCR and GTO models

Keywords

semiconductor device models; semiconductor diodes; semiconductor switches; thyristors; SCR-GTO model; basic performance level; behavioral switch model; benchmark circuit; model performance; performance features; physical diode model; quasi-physical modeling technique; regenerative thyristor models; switching performance; Diodes; Equations; Integrated circuit modeling; Resistors; Solid modeling; Switches; Switching circuits; Thermal resistance; Thermal stresses; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 1996. Thirty-First IAS Annual Meeting, IAS '96., Conference Record of the 1996 IEEE

Conference_Location

San Diego, CA

ISSN

0197-2618

Print_ISBN

0-7803-3544-9

Type

conf

DOI

10.1109/IAS.1996.559268

Filename

559268