Sub-micrometer vertical type current channel of semi-conductive al gate organic semiconductor copper phthalocyanine thin film transistor

The sub-micrometer vertical type current channel of semi-conductive Al gate organic semiconductor copper phthalocyanine thin film transistor (VOTFT) with five layered structure of Au(Emitter)/CuPc/Al(Base)/CuPc/Au(collector) is fabricated by vacuum evaporation technique with organic semiconductor copper phthalocyanine‥ As the thickness of semi-conductive Al thin film is approximately 20nm, the carriers emitted from source electrode tunnel through CuPc/Al/CuPc double schottky barrier formed the operating current of thin film transistors. The result shows that VOTFT has the unsaturated voltage and current characteristic similar with the bipolar mode static induction transistor, low driving voltage, strong gate voltage capacity and high current density. The dynamic small signal responsive frequency can be achieved to ∼1000Hz The DC characteristic is similar with inorganic semiconductor polycrystalline silicon devices.