Radiation Sensitivity of Ohmic RF-MEMS Switches for Spatial Applications

Author

Tazzoli, A. ; Cellere, G. ; Autizi, E. ; Peretti, V. ; Paccagnella, A. ; Meneghesso, G.

Author_Institution

Dept. of Inf. Eng., Univ. of Padova, Padova

fYear

2009

fDate

25-29 Jan. 2009

Firstpage

634

Lastpage

637

Abstract

The impact of 2 MeV protons and 10 keV X-rays radiation stresses on electrostatically actuated ohmic RF-MEMS switches has been analyzed at increasing radiation dose and during subsequent annealing at room temperature. Small variations of electrical parameters (actuation and release voltages) have been identified, accompanied by a strong rf-performances degradation. Monte Carlo TRIM simulations have been carried out to understand the mechanisms responsible of such degradations, finding that both NIEL and ionizing damages appear to play an important role.

Keywords

Monte Carlo methods; annealing; electrostatic actuators; microswitches; protons; Monte Carlo TRIM simulations; X-rays radiation stresses; annealing; electron volt energy 10 keV; electron volt energy 2 MeV; electrostatic actuators; ohmic RF-MEMS switches; protons; radiation sensitivity; spatial applications; temperature 293 K to 298 K; Annealing; Degradation; Electrostatic analysis; Protons; Radiofrequency microelectromechanical systems; Stress; Switches; Temperature sensors; Voltage; X-rays;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2009. MEMS 2009. IEEE 22nd International Conference on

Conference_Location

Sorrento

ISSN

1084-6999

Print_ISBN

978-1-4244-2977-6

Electronic_ISBN

1084-6999

Type

conf

DOI

10.1109/MEMSYS.2009.4805462

Filename

4805462