Title :
Tensile Measurement of a Single Crystal Gallium Nitride Nanowire
Author :
Brown, J.J. ; Baca, A.I. ; Bright, V.M.
Author_Institution :
Dept. of Mech. Eng., Univ. of Colorado, Boulder, CO
Abstract :
This paper reports the first direct tensile test on a nearly defect free, n-type (Si-doped) GaN nanowire single crystal. Here, for the first time, nanowires have been integrated with actuated, active microelectromechanical (MEMS) structures using dielectrophoresis-driven self-assembly and Pt-C clamps created using a gallium focused ion beam. The nanowire modulus of elasticity is measured to be 201 GPa, and the nanowire demonstrated more than 4% elongation before one of the clamps failed. Failure of the test sample occurred at the interface of one of the Pt-C clamps with the fixed MEMS stage, rather than in the nanowire itself.
Keywords :
III-V semiconductors; gallium compounds; mechanical variables measurement; nanowires; semiconductor quantum wires; silicon; tensile strength; tensile testing; wide band gap semiconductors; GaN:Si; Pt-C clamps; active microelectromechanical structures; dielectrophoresis-driven self-assembly; direct tensile test; elasticity; gallium focused ion beam; nanowire modulus; nanowires; nearly defect free n-type (Si-doped) GaN nanowire single crystal; single crystal gallium nitride nanowire; tensile measurement; Actuators; Clamps; Conducting materials; Gallium nitride; III-V semiconductor materials; Materials testing; Micromechanical devices; Optical materials; Thermal conductivity; Thermal expansion;
Conference_Titel :
Micro Electro Mechanical Systems, 2009. MEMS 2009. IEEE 22nd International Conference on
Conference_Location :
Sorrento
Print_ISBN :
978-1-4244-2977-6
Electronic_ISBN :
1084-6999
DOI :
10.1109/MEMSYS.2009.4805464
