Tensile Measurement of a Single Crystal Gallium Nitride Nanowire

Author

Brown, J.J. ; Baca, A.I. ; Bright, V.M.

Author_Institution

Dept. of Mech. Eng., Univ. of Colorado, Boulder, CO

fYear

2009

fDate

25-29 Jan. 2009

Firstpage

642

Lastpage

645

Abstract

This paper reports the first direct tensile test on a nearly defect free, n-type (Si-doped) GaN nanowire single crystal. Here, for the first time, nanowires have been integrated with actuated, active microelectromechanical (MEMS) structures using dielectrophoresis-driven self-assembly and Pt-C clamps created using a gallium focused ion beam. The nanowire modulus of elasticity is measured to be 201 GPa, and the nanowire demonstrated more than 4% elongation before one of the clamps failed. Failure of the test sample occurred at the interface of one of the Pt-C clamps with the fixed MEMS stage, rather than in the nanowire itself.

Keywords

III-V semiconductors; gallium compounds; mechanical variables measurement; nanowires; semiconductor quantum wires; silicon; tensile strength; tensile testing; wide band gap semiconductors; GaN:Si; Pt-C clamps; active microelectromechanical structures; dielectrophoresis-driven self-assembly; direct tensile test; elasticity; gallium focused ion beam; nanowire modulus; nanowires; nearly defect free n-type (Si-doped) GaN nanowire single crystal; single crystal gallium nitride nanowire; tensile measurement; Actuators; Clamps; Conducting materials; Gallium nitride; III-V semiconductor materials; Materials testing; Micromechanical devices; Optical materials; Thermal conductivity; Thermal expansion;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2009. MEMS 2009. IEEE 22nd International Conference on

Conference_Location

Sorrento

ISSN

1084-6999

Print_ISBN

978-1-4244-2977-6

Electronic_ISBN

1084-6999

Type

conf

DOI

10.1109/MEMSYS.2009.4805464

Filename

4805464