Title :
Electrodeposition of Permalloy in Deep Silicon Trenches Without Edge-Overgrowth Utilizing Dry Film Photoresist
Author :
Park, Sang-Won ; Senesky, Debbie G. ; Pisano, Albert P.
Author_Institution :
Berkeley Sensor & Actuator Center (BSAC), Univ. of California, Berkeley, CA
Abstract :
An electrodeposition process for embedding NiFe alloys in deep silicon trenches (100 mum) without edge-overgrowth was developed by utilizing dry film photoresist as a sacrificial trench top. The dry film photoresist prevented high concentration of current flux at the trench edges during electrodeposition leading to planar deposition topographies. In addition, the effect of the applied current density on material composition of the electrodeposited NiFe film was investigated, and the composition for permalloy (Ni80Fe20) was obtained with a current density of 100 mA/cm2. Furthermore, the B-H response of the electrodeposited permalloy films exhibited a saturation magnetic flux density and relative permeability of 1.23 Tesla and 82, respectively. The electrodeposition technique developed in this work was utilized to fabricate a free-standing MEMS electromagnetic linear actuator composed of silicon and permalloy structures.
Keywords :
current density; electrodeposition; electromagnetic actuators; microactuators; nickel alloys; photoresists; B-H response; NiFe; current density; current flux; deep silicon trench; dry film photoresist; edge-overgrowth; electrodeposition process; free-standing MEMS electromagnetic linear actuator; magnetic flux density saturation; planar deposition topographies; relative permeability; sacrificial trench top; Composite materials; Current density; Iron; Magnetic films; Magnetic flux density; Permeability; Resists; Semiconductor films; Silicon alloys; Surfaces;
Conference_Titel :
Micro Electro Mechanical Systems, 2009. MEMS 2009. IEEE 22nd International Conference on
Conference_Location :
Sorrento
Print_ISBN :
978-1-4244-2977-6
Electronic_ISBN :
1084-6999
DOI :
10.1109/MEMSYS.2009.4805476
