Title :
A power-efficient integrated input/output completion detection circuit for asynchronous-logic quasi-delay-insensitive Pre-Charged Half-Buffer
Author :
Ho, Weng-Geng ; Chong, Kwen-Siong ; Gwee, Bah-Hwee ; Chang, Joseph S. ; Yee, Ming-Fatt
Author_Institution :
Nanyang Technol. Univ., Singapore, Singapore
Abstract :
We propose a power- and area-efficient completion detection circuit for improved asynchronous-logic (async) quasi-delay-insensitive (QDI) Pre-Charged Half-Buffer (PCHB) handshake communications. These improved attributes can be achieved by integrating the (separate) input and output completion detection circuits (within the async QDI PCHB circuit) into an integrated input/output completion detection circuit in the transistor level, hereby reducing leakage current paths (leakage power dissipation) and circuit overheads. Moreover, by integrating a reset signal into the integrated input/output completion detection circuit, a stable output state can be achieved during the initialization stage. Based on the simulations on 4×4-bit pipeline multipliers (@1V, 65nm CMOS process), we show that the multiplier with our proposed approach is 37% lower power dissipation (@400MHz input rate), yet 39% lower energy dissipation (per-operation), 35% lower energy-delay product and 21% lesser number of transistors (compared to a conventional design with separate input and output completion detection circuits). These improved results are achieved with an insignificant cost of 5% longer delay (slower speed).
Keywords :
CMOS integrated circuits; asynchronous circuits; buffer circuits; delay circuits; detector circuits; multiplying circuits; CMOS process; area-efficient completion detection circuit; asynchronous-logic quasidelay-insensitive pre-charged half-buffer; circuit overheads; handshake communications; leakage current path reduction; leakage power dissipation; lower energy dissipation; lower energy-delay product; pipeline multipliers; power-efficient integrated input-output completion detection circuit; size 65 nm; transistor level; voltage 1 V; Delay; Inverters; Logic gates; MOSFETs; Pipelines; Power dissipation;
Conference_Titel :
Integrated Circuits (ISIC), 2011 13th International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-61284-863-1
DOI :
10.1109/ISICir.2011.6131975