DocumentCode :
3046037
Title :
Semiconducting Y-Ba-Cu-O Infrared Microbolometer Array Fabricated and Characterized with CCBDI ROIC
Author :
Kumar, S. ; Butler, D.P.
Author_Institution :
Univ. of Texas at Arlington, Arlington, TX
fYear :
2009
fDate :
25-29 Jan. 2009
Firstpage :
837
Lastpage :
840
Abstract :
Semiconducting Yttrium Barium Copper Oxide (Y-Ba-Cu-O) microbolometers based on self-supporting structure are fabricated and characterized with on-chip constant current buffered direct injection (CCBDI) readout integrated circuit (ROIC) in AMI 1.5 mum double-poly-double-metal n-well 2.5 V complementary metal-oxide-semiconductor (CMOS) technology. Self-supporting Y-Ba-Cu-O microbolometers exhibit low thermal mass, hence low thermal time constant, and are integrated with a silicon readout circuit for first time. The CCBDI readout circuit is designed to work both with a traditional frame rate of 30 Hz as well as a novel, improved frame rate of 200 Hz for a 640 times 480 array for faster thermal imaging in commercial, military and biomedical applications.
Keywords :
CMOS image sensors; barium compounds; bolometers; infrared detectors; infrared imaging; readout electronics; yttrium compounds; CCBDI ROIC; Y-Ba-Cu-O; complementary metal-oxide-semiconductor technology; double-poly-double-metal n-well CMOS technology; frequency 200 Hz; on-chip constant current buffered direct injection; readout integrated circuit; semiconducting infrared microbolometer array fabrication; thermal imaging; voltage 2.5 V; Bolometers; Circuits; Electrodes; Geometry; Immune system; Infrared detectors; Optical imaging; Semiconductivity; Voltage; Yttrium barium copper oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2009. MEMS 2009. IEEE 22nd International Conference on
Conference_Location :
Sorrento
ISSN :
1084-6999
Print_ISBN :
978-1-4244-2977-6
Electronic_ISBN :
1084-6999
Type :
conf
DOI :
10.1109/MEMSYS.2009.4805513
Filename :
4805513
Link To Document :
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