DocumentCode
3046263
Title
Post-Fabrication Electrical Trimming of Silicon Bulk Acoustic Resonators using Joule Heating
Author
Samarao, A.K. ; Ayazi, F.
Author_Institution
Georgia Inst. of Technol., Atlanta, GA
fYear
2009
fDate
25-29 Jan. 2009
Firstpage
892
Lastpage
895
Abstract
This paper presents a new method to electrically trim the resonance frequency of a Silicon Bulk Acoustic Resonator (SiBAR) post fabrication. Width-extensional mode silicon resonators are heated by passing a current through their resonating elements. This causes a mass loading gold pattern to diffuse into the bulk of the resonator. Upon cooling, the gold diffusion increases the stiffness of the resonating structure slightly, which reflects as an upward shift in resonance frequency. Thus, silicon resonators can be permanently trimmed to a desired frequency value by an electrical calibration step. As a proof of concept, an upward frequency shift of 240 kHz is demonstrated for a 40% mass loaded 100 MHz SiBAR after one hour of Joule heating with 30 mA of DC current.
Keywords
acoustic resonators; bulk acoustic wave devices; cooling; diffusion; elemental semiconductors; micromechanical resonators; silicon; Joule heating; cooling; current 30 mA; diffusion; electrical calibration; electrical trimming; frequency 100 MHz; resonance frequency; resonating elements; silicon bulk acoustic resonator; stiffness; time 1 hour; upward frequency shift; Degradation; Electric resistance; Electrodes; Etching; Frequency; Protection; Q factor; Resistance heating; Silicon compounds; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 2009. MEMS 2009. IEEE 22nd International Conference on
Conference_Location
Sorrento
ISSN
1084-6999
Print_ISBN
978-1-4244-2977-6
Electronic_ISBN
1084-6999
Type
conf
DOI
10.1109/MEMSYS.2009.4805527
Filename
4805527
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