• DocumentCode
    3046263
  • Title

    Post-Fabrication Electrical Trimming of Silicon Bulk Acoustic Resonators using Joule Heating

  • Author

    Samarao, A.K. ; Ayazi, F.

  • Author_Institution
    Georgia Inst. of Technol., Atlanta, GA
  • fYear
    2009
  • fDate
    25-29 Jan. 2009
  • Firstpage
    892
  • Lastpage
    895
  • Abstract
    This paper presents a new method to electrically trim the resonance frequency of a Silicon Bulk Acoustic Resonator (SiBAR) post fabrication. Width-extensional mode silicon resonators are heated by passing a current through their resonating elements. This causes a mass loading gold pattern to diffuse into the bulk of the resonator. Upon cooling, the gold diffusion increases the stiffness of the resonating structure slightly, which reflects as an upward shift in resonance frequency. Thus, silicon resonators can be permanently trimmed to a desired frequency value by an electrical calibration step. As a proof of concept, an upward frequency shift of 240 kHz is demonstrated for a 40% mass loaded 100 MHz SiBAR after one hour of Joule heating with 30 mA of DC current.
  • Keywords
    acoustic resonators; bulk acoustic wave devices; cooling; diffusion; elemental semiconductors; micromechanical resonators; silicon; Joule heating; cooling; current 30 mA; diffusion; electrical calibration; electrical trimming; frequency 100 MHz; resonance frequency; resonating elements; silicon bulk acoustic resonator; stiffness; time 1 hour; upward frequency shift; Degradation; Electric resistance; Electrodes; Etching; Frequency; Protection; Q factor; Resistance heating; Silicon compounds; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 2009. MEMS 2009. IEEE 22nd International Conference on
  • Conference_Location
    Sorrento
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4244-2977-6
  • Electronic_ISBN
    1084-6999
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2009.4805527
  • Filename
    4805527