Title :
Double Exposure and Double Patterning Studies with Inverse Lithography
Author_Institution :
Hanyang Univ., Ansan
Abstract :
The automation methods of mask design are described in this paper for double exposure and double patterning by using inverse lithography. This attempts to synthesize the mask for the desired wafer pattern by inverting the forward model from mask to wafer. The combination of double exposure, double patterning, and inverse lithography is discussed for 20 nm half pitch pattern generation.
Keywords :
masks; nanolithography; nanopatterning; automation methods; double exposure; double patterning; half pitch pattern generation; inverse lithography; mask design; size 20 nm; wafer pattern; Circuits; Costs; Diffraction; Etching; Lighting; Lithography; Mass production; Microelectronics; Physics; Self-assembly; double exposure; double patterning; inverse lithography; lithography; lithography simulation;
Conference_Titel :
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location :
Kyoto
Print_ISBN :
978-4-9902472-4-9
DOI :
10.1109/IMNC.2007.4456114
