• DocumentCode
    3048627
  • Title

    Fabrication and in-plane electrical resistivity of Ge/SiGe quantum dot superlattices

  • Author

    Hayashi, K. ; Abiko, S. ; Motegi, N. ; Kajitani, T.

  • Author_Institution
    Tohoku Univ., Sendai
  • fYear
    2007
  • fDate
    5-8 Nov. 2007
  • Firstpage
    160
  • Lastpage
    161
  • Abstract
    The in-plane electrical resistivity of the Ge/SiGe dot superlattices was studied in this paper. It is found that the electrical resistivity depends on the dot density as well as the Ge thickness. Very low electrical resistivity (lower than 9.15 times 10-2 Omegacm) is realized for the horizontal conductance.
  • Keywords
    electrical conductivity; electrical resistivity; elemental semiconductors; germanium; semiconductor quantum dots; semiconductor superlattices; Ge thickness; Ge-SiGe; Ge/SiGe quantum dot superlattices; dot density; horizontal conductance; in-plane electrical resistivity; Atomic force microscopy; Electric resistance; Fabrication; Germanium silicon alloys; Optical films; Quantum dots; Silicon germanium; Superlattices; Thermal conductivity; Thermoelectricity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology, 2007 Digest of papers
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-4-9902472-4-9
  • Type

    conf

  • DOI
    10.1109/IMNC.2007.4456153
  • Filename
    4456153
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3048627