DocumentCode :
3050555
Title :
A wideband CMOS divide-by-3 injection-locked frequency divider
Author :
Dehghani, Rasoul
Author_Institution :
Electr. & Comput. Eng. Dept., Isfahan Univ. of Technol., Isfahan, Iran
fYear :
2013
fDate :
14-16 May 2013
Firstpage :
1
Lastpage :
4
Abstract :
An injection locked frequency divider with odd division factor is presented. The divider works based on two-stage differential ring oscillator in which two quadrature injection signals are applied to the circuit. The divider can divide input RF signals by the factor of 3. The circuit has been designed in a 0.18 μm CMOS technology with a supply voltage of 1.8V. Simulation results in divide-by-3 mode, show that typical locking range of the divider is from 2 GHz to 10 GHz for -0.5 dBm injection signal level while its total power dissipation for 10 GHz input injection signal is 374 μW at the supply voltage of 1.8V.
Keywords :
CMOS integrated circuits; frequency dividers; injection locked oscillators; power supply circuits; CMOS technology; divide-by-3 mode; frequency 2 GHz to 10 GHz; injection locked frequency divider; injection signal level; input RF signals; input injection signal; locking range; odd division factor; power dissipation; quadrature injection signals; size 0.8 mum; supply voltage; two-stage differential ring oscillator; voltage 1.8 V; wideband CMOS divide-by-3 injection-locked frequency divider; CMOS integrated circuits; Frequency conversion; Frequency synthesizers; Latches; Phase noise; Ring oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Engineering (ICEE), 2013 21st Iranian Conference on
Conference_Location :
Mashhad
Type :
conf
DOI :
10.1109/IranianCEE.2013.6599827
Filename :
6599827
Link To Document :
بازگشت