Title :
Novel Neutral Beam Etching Processes for Future Nanoscale Devices
Author_Institution :
Tohoku Univ., Sendai
Abstract :
In this paper, a highly efficient neutral-beam source is developed to accomplish the ultimate top-down etching for future nanoscale devices. The ultimate etching processes for future sub-50 nm devices in using the new neutral beam sources are introduced.
Keywords :
etching; nanotechnology; plasma materials processing; plasma sources; nanoscale devices; neutral beam etching; neutral-beam source; Apertures; Electrons; Etching; Nanoscale devices; Particle beams; Photonic crystals; Plasma applications; Plasma devices; Plasma sources; Plasma x-ray sources;
Conference_Titel :
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location :
Kyoto
Print_ISBN :
978-4-9902472-4-9
DOI :
10.1109/IMNC.2007.4456309
