DocumentCode :
3051487
Title :
Mechanical reliability of micro/nano-structures in MEMS devices
Author :
Tsuchiya, Toshiyuki
Author_Institution :
Kyoto Univ., Kyoto
fYear :
2007
fDate :
5-8 Nov. 2007
Firstpage :
496
Lastpage :
497
Abstract :
In this paper,the mechanical reliability evaluation for micro/nano-structure in MEMS devices is analyzed to establish theories of MEMS materials, especially of silicon.In order to evaluate the mechanical strength of micro/nano-structure in the same dimensions as the actual devices, we have developed a tensile testing method and testing tools dedicated for micron-sized specimens.We have evaluated the size effect and process dependence on the tensile strength of polycrystalline silicon, environmental effect on strength of silicon, SiO2, and SiN films, and high temperature fracture behavior of single crystal silicon. The displacement-stress curves of single crystal silicon tensile-tested at 600degC, which indicates the yield points at the middle of curves. The fractured specimen, which indicates slips on (111) plane is occurred near the fracture surface.
Keywords :
deformation; fracture; micromechanical devices; nanotechnology; reliability; silicon; silicon compounds; tensile testing; MEMS devices; Si; SiN; SiO2; fracture surface; frequency 1 kHz to 100 kHz; mechanical reliability; microstructure; nanostructure; polycrystalline silicon; size effect; temperature 600 C; tensile strength; Materials reliability; Materials testing; Microelectromechanical devices; Micromechanical devices; Nanoscale devices; Reliability theory; Semiconductor films; Silicon compounds; Surface cracks; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location :
Kyoto
Print_ISBN :
978-4-9902472-4-9
Type :
conf
DOI :
10.1109/IMNC.2007.4456321
Filename :
4456321
Link To Document :
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