DocumentCode
3051693
Title
Pulsed voltage pre-breakdown observations on silicon in vacuum
Author
Gamble, J.P. ; Sudarshan, T.S. ; Faust, J.W., Jr.
Author_Institution
Dept. of Electr. & Comput. Eng., South Carolina Univ., Columbia, SC, USA
fYear
1990
fDate
28-31 Oct 1990
Firstpage
533
Lastpage
538
Abstract
The flashover process consists of three phases: phase i is characterized by the presence of displacement, ohmic, or space-charge-limited (SCL) current; phase ii represents partial collapse in the applied voltage accompanied by luminosity and an increase in current; and phase iii, or flashover, consists of complete voltage collapse, rapid rise in current, and intense luminosity. The existence of low-level emission in the ultraviolet-visible range during phase i in the presence of well-established SCL current is shown. The luminosity exhibits an increase in intensity just prior to the initiation of phase ii, thus indicating the onset of device failure as evidenced by partial voltage collapse. The inception voltage for phase i luminosity shows a correlation with the onset of phase ii and iii processes, but no correlation with the conditioned flashover voltage is observed. Sample preparation can significantly increase the luminosity inception voltage
Keywords
electric breakdown of solids; electroluminescence; elemental semiconductors; flashover; luminescence of inorganic solids; silicon; space-charge-limited conduction; SCL current; complete voltage collapse; device failure; displacement current; flashover process; inception voltage; luminosity; ohmic current; partial collapse; space-charge-limited current; ultraviolet-visible range; Breakdown voltage; Cleaning; Flashover; Jitter; Photoconductivity; Silicon carbide; Silicon compounds; Space charge; Switches; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Insulation and Dielectric Phenomena, 1990. Annual Report., Conference on
Conference_Location
Pocono Manor, PA
Type
conf
DOI
10.1109/CEIDP.1990.201393
Filename
201393
Link To Document