Title :
High power, efficient Al-free InGaAs/InGaP/GaAs diode lasers
Author_Institution :
Reed Center for Photonics, Wisconsin Univ., Madison, WI, USA
Abstract :
We report on the optimization of InGaAs/InGaAsP/InGaP strained-layer quantum well laser structures through the use of the broad-waveguide concept for maximizing the CW output power. The Al-free DQW laser structures are grown by low-pressure MOCVD. Record CW performances (8.1 W front-facet power for a cavity length L=4 mm; and 59% wallplug efficiency for L=0.5 mm) are obtained from broad-area (100 /spl mu/m-wide-stripe) devices. Catastrophic optical mirror damage (COMD) values from LR/HR facet-coated devices under CW operation (i.e. /spl sim/15 MW/cm/sup 2/) are found to be similar to those for InGaAs/A1GaAs facet-coated lasers, indicating that the quantum-well material (i.e. strained-layer InGaAs), and not the cladding/confinement layer material, primarily determines the COMD value.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser mirrors; quantum well lasers; waveguide lasers; 0.5 mm; 100 mum; 4 mm; 59 percent; 8.1 W; CW output power; DQW laser structures; InGaAs-InGaAsP-InGaP; InGaAs-InGaP-GaAs; InGaAs/InGaAsP/InGaP strained-layer quantum well laser structures; LR/HR facet-coated devices; broad-area; broad-waveguide concept; catastrophic optical mirror damage; cavity length; cladding/confinement layers; front-facet power; high power efficient Al-free InGaAs/InGaP/GaAs diode lasers; low-pressure MOCVD; optimization; strained-layer InGaAs; wallplug efficiency; Diode lasers; Gallium arsenide; Indium gallium arsenide; MOCVD; Optical devices; Optical materials; Optical recording; Power generation; Power lasers; Quantum well lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.565111
