High CW power 0.8 μm-band Al-free active-region diode lasers

Author

Wade, K. ; Mawst, L.J. ; Botez, D. ; Jansen, M. ; Fang, F. ; Nabiev, R.F.

Author_Institution

Reed Center for Photonics, Wisconsin Univ., Madison, WI, USA

Volume

1

fYear

1996

fDate

18-19 Nov 1996

Firstpage

44

Abstract

100 μm-wide stripe, Al-free, uncoated, 0.83 μm diode lasers provide 4.7 W CW maximum output power and 45% maximum CW wallplug efficiency at T=20°C. The active region consists of a 150 Å In _0.09Ga_0.91As_0.8Pb_0.2 quantum well surrounded by 0.4 μm In_0.5Ga_0.5P confining layers and 1.5 μm In_0.5(Ga_0.5Al_0.5)P cladding layers. For 1 mm-long devices, we obtain threshold-current densities as low as 220 A/cm² and threshold-current characteristic temperature, T₀, as high as 160 K

Keywords

III-V semiconductors; current density; gallium arsenide; indium compounds; laser transitions; quantum well lasers; 0.4 mum; 0.8 μm-band Al-free active-region diode lasers; 0.8 mum; 1.5 mum; 100 μm-wide stripe uncoated diode lasers; 150 angstrom; 160 K; 20 degC; 4.7 W; 45 percent; In(Ga_0.5Al_0.5)P; In_0.09Ga_0.91As_0.8Pb_0.2; In_0.09Ga_0.91As_0.8Pb_0.2 quantum well; In_0.5(Ga_0.5Al_0.5)P cladding layers; In_0.5Ga_0.5P; In_0.5Ga_0.5P confining layers; active region; high CW power; maximum CW wallplug efficiency; maximum output power; threshold-current characteristic temperature; threshold-current densities; Diode lasers; Power generation; Power lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.565113

Filename

565113