Title :
High power Al-free 808 nm laser bars
Author :
Näppi, J. ; Ovtchinnikov, A. ; Asonen, H. ; Heinemann, S. ; Daiminger, F.
Author_Institution :
Tutcore Ltd., Tampere, Finland
Abstract :
We have grown Al-free GaInAsP/GaInP 808 nm strained single quantum well laser structures by the gas source molecular beam epitaxy method. Processed laser bars are shown to possess very good performance in terms of efficiency and short term reliability. They could replace AlGaAs laser bars in high power applications if the future long term reliability tests correlate with the present short term reliability data.
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; laser reliability; quantum well lasers; semiconductor growth; 808 nm; Al-free GaInAsP/GaInP 808 nm laser structures; GaInAsP-GaInP; efficiency; gas source molecular beam epitaxy method; high power Al-free 808 nm laser bars; long term reliability tests; performance; short term reliability; strained single quantum well laser structures; Bars; Diode lasers; Gas lasers; Molecular beam epitaxial growth; Power lasers; Power system reliability; Pump lasers; Quantum cascade lasers; Quantum well lasers; Testing;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.565115
