Title :
The electrical properties of semi-insulating GaAs analysed as a relaxation semiconductor
Author :
Jones, K. ; Santana, J. ; McPherson, M.
Author_Institution :
Dept. of Phys., Lancaster Univ., UK
Abstract :
From experiments on semi-insulating (SI) GaAs diodes it is shown that the results can be analysed using relaxation semiconductor theory. This is most apparent for P-SI-N or Schottky-SI-Ohmic diodes and the agreement improves after irradiation when the ratio of generation-recombination (g-r) centres to deep levels increases
Keywords :
III-V semiconductors; deep levels; electron-hole recombination; gallium arsenide; surface recombination; GaAs; deep levels; electrical properties; generation-recombination centres; relaxation semiconductor; semi-insulating GaAs; Charge carrier density; Conductivity; Dielectric materials; Gallium arsenide; Physics; Radiation detectors; Schottky diodes; Semiconductor diodes; Semiconductor materials; Silicon;
Conference_Titel :
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Conference_Location :
Berkeley, CA
Print_ISBN :
0-7803-4354-9
DOI :
10.1109/SIM.1998.785078
