DocumentCode
3052124
Title
New techniques for the characterization of defect levels in semi-insulating materials
Author
Longeaud, C. ; Kleider, J.P. ; Kaminski, P. ; Kozlowski, R. ; Pawlowski, M. ; Cwirko, R.
Author_Institution
Lab. de Genie Electrique, Paris VI Univ., France
fYear
1998
fDate
1998
Firstpage
72
Lastpage
75
Abstract
Deep levels in semi-insulating (SI) GaAs have been investigated by two complementary techniques: the high resolution photoinduced transient spectroscopy performed at the institute of electronic materials technology, and the modulated photocurrent experiment performed at the Laboratoire de Genie Electrique de Paris. In this paper we present and compare results obtained by both techniques for SI GaAs
Keywords
III-V semiconductors; deep level transient spectroscopy; deep levels; gallium arsenide; photoconductivity; GaAs; defect levels; high resolution photoinduced transient spectroscopy; modulated photocurrent experiment; semi-insulating materials; Electrodes; Gallium arsenide; High speed integrated circuits; High-speed electronics; Impurities; Insulation; Materials science and technology; Photoconductivity; Semiconductor materials; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Conference_Location
Berkeley, CA
Print_ISBN
0-7803-4354-9
Type
conf
DOI
10.1109/SIM.1998.785079
Filename
785079
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