Near-field analysis of beam properties of InGaAs ridge lasers

Author

Herzog, W.D. ; Ünlü, M.S. ; Goldberg, B.B. ; Rhodes, G.H. ; Harder, C.

Author_Institution

Center for Photonics Res., Boston Univ., MA, USA

Volume

1

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

109

Abstract

We report mode structure and beam propagation analysis of high power strained (In,Ga)As quantum well lasers using the super-resolution capabilities of near-field scanning optical microscopy (NSOM). We are able to directly measure the optical beam waist and astigmatism by imaging the output of the laser diode at various heights above the device facet. In the near-field we observe spatial shifts in the position of the optical field between different spectral components of the laser diode emission.

Keywords

III-V semiconductors; aberrations; gallium arsenide; gradient index optics; indium compounds; laser beams; laser modes; laser variables measurement; optical microscopy; quantum well lasers; waveguide lasers; GRIN-SCH laser diodes; InGaAs; InGaAs ridge lasers; astigmatism; beam propagation analysis; beam properties; high power strained InGaAs quantum well lasers; laser diode emission spectral components; laser diode output imaging; mode structure; near-field analysis; near-field scanning optical microscopy; optical beam waist; optical field position; spatial shifts; super-resolution capabilities; Diode lasers; Indium gallium arsenide; Laser beams; Laser modes; Optical beams; Optical microscopy; Optical propagation; Power lasers; Quantum well lasers; Spatial resolution;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.565149

Filename

565149