Properties of small-aperture selectively oxidized VCSELs

Author

Choquette, Kent D. ; Chow, W.W. ; Hadley, G. Ronald ; Hou, H.Q. ; Geib, K.M.

Author_Institution

Center for Compound Semicond. Technol., Sandia Nat. Labs., Albuquerque, NM, USA

Volume

1

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

144

Abstract

Summary form only given. In summary, we have developed an accurate first-principles analysis to probe the threshold properties of selectively oxidized 850 nm AlGaAs QW VCSELs. The analysis of our present VCSELs indicates that in order to achieve ultralow threshold, oxide aperture scattering loss and leakage currents must be addressed. The agreement between our calculations and experiment solidify our understanding and enable the identification of fundamental limitations of low threshold VCSEL operation. The performance and analysis of modified VCSEL designs will be reported.

Keywords

III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; laser cavity resonators; laser theory; laser transitions; leakage currents; light scattering; optical losses; oxidation; quantum well lasers; semiconductor device models; surface emitting lasers; 850 nm; AlGaAs; AlGaAs QW VCSELs; accurate first-principles analysis; fundamental limitations; leakage currents; low threshold VCSEL operation; modified VCSEL designs; oxide aperture scattering loss; small-aperture selectively oxidized VCSELs; threshold properties; ultralow threshold; Apertures; Charge carrier density; Laser modes; Leakage current; Optical losses; Optical scattering; Surface emitting lasers; Threshold current; Threshold voltage; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.565166

Filename

565166