Low-threshold multiple-wavelength vertical-cavity laser arrays with single-mode operation

Author

Yuen, Wupen ; Li, Gabriel S. ; Chang-Hasnain, Connie J.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

1

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

150

Abstract

Summary form only given. To summarize, multiple-wavelength InGaAs DBR QW VCSEL arrays with low threshold (420 /spl mu/A) and wide wavelength span (44.8nm) are achieved by using improved p-mirror design and AlAs wet oxidation. Through the device size control and less heat dissipation from the low-voltage p-DBR laser, single-mode operation is also obtained over a 20.8nm span.

Keywords

III-V semiconductors; cooling; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser mirrors; laser modes; optical transmitters; oxidation; quantum well lasers; semiconductor laser arrays; wavelength division multiplexing; 420 muA; AlAs wet oxidation; InGaAs; device size control; improved p-mirror design; less heat dissipation; low threshold; low-threshold multiple-wavelength vertical-cavity laser arrays; low-voltage p-DBR laser; multiple-wavelength InGaAs DBR QW VCSEL arrays; single-mode operation; wide wavelength span; Gallium arsenide; Mirrors; Optical arrays; Optical surface waves; Oxidation; Surface emitting lasers; Surface waves; Temperature sensors; Vertical cavity surface emitting lasers; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.565169

Filename

565169