Title :
Time-resolved reflectivity measurement of thermally stabilized low temperature grown GaAs doped with beryllium
Author :
Zhao, R. ; Specht, P. ; Lutz, R.C. ; Pu, N.W. ; Jeong, S. ; Bokor, J. ; Weber, E.R.
Author_Institution :
Dept. of Mater. Sci. & Miner. Eng., California Univ., Berkeley, CA, USA
Abstract :
The influence of Be-doping on carrier lifetime in low temperature grown (LT) GaAs has been studied using time-resolved reflectivity measurement. The ultrafast photogenerated carrier lifetime decreases with increasing Be doping concentration, because the total amount of excess As, i.e., arsenic antisites (AsGa), and the ionized arsenic antisites are increased due to mechanical and electrical compensation between AsGa, and Be acceptor. It was observed that the carrier lifetime in Be-doped LT-GaAs can be even shorter after high temperature annealing, which is contrary to the behavior of undoped samples
Keywords :
III-V semiconductors; annealing; antisite defects; beryllium; carrier lifetime; charge compensation; gallium arsenide; photoconductivity; reflectivity; semiconductor doping; semiconductor epitaxial layers; time resolved spectra; Be acceptor; Be doping concentration; Be-doped LT-GaAs; Be-doping; GaAs:Be; arsenic antisites; carrier lifetime; electrical compensation; high temperature annealing; ionized arsenic antisites; mechanical compensation; thermally stabilized low temperature grown GaAs; time-resolved reflectivity; ultrafast photogenerated carrier lifetime; Annealing; Charge carrier lifetime; Conductivity; Doping; Gallium arsenide; Lattices; Molecular beam epitaxial growth; Reflectivity; Substrates; Temperature;
Conference_Titel :
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Conference_Location :
Berkeley, CA
Print_ISBN :
0-7803-4354-9
DOI :
10.1109/SIM.1998.785092
