Title :
Photoluminescence at 1.5 μm of heavily Er-doped insulating films on Si
Author :
Lanzerstorfer, S. ; Pedarnig, J.D. ; Gunasekaran, R.A. ; Bauerle, D. ; Jantsch, W.
Author_Institution :
Inst. fur Halbleiterphys., Johannes Kepler Univ., Linz, Austria
Abstract :
A comparison of the photoluminescence (PL) properties of Er-doped SiO2, soda-lime glass, and ZBLAN glass films fabricated by pulsed-laser deposition (PLD) is given. The PL yield depends strongly on the host material. Under identical growth conditions and the same erbium concentrations in the targets, films deposited from the soda lime and ZBLAN glass show more than an order of magnitude higher luminescence yield. This enhancement is attributed to a higher concentration of optically active erbium in the multicomponent glass environment. Temperature quenching of the PL yield is observed for SiO2:Er. The PL yield of soda-lime glass:Er and ZBLAN:Er increases with increasing temperature. A room temperature external quantum efficiency of 2×10-4 was obtained for Er-doped soda-lime glass
Keywords :
erbium; fluoride glasses; glass; insulating thin films; optical glass; photoluminescence; pulsed laser deposition; radiation quenching; silicon compounds; 1.5 mum; PL yield; Si; SiO2-CaO-Na2O:Er; SiO2:Er; ZBLAN glass films; ZBLAN:Er; ZrF4-BaF2-LaF3-AlF3-NaF:Er; erbium concentrations; growth conditions; heavily Er-doped insulating films; luminescence yield; multicomponent glass environment; optically active erbium; photoluminescence; pulsed-laser deposition; room temperature external quantum efficiency; soda-lime glass:Er; temperature quenching; Chemical lasers; Erbium; Glass; Insulation; Optical films; Optical materials; Photoluminescence; Semiconductor films; Silicon compounds; Temperature;
Conference_Titel :
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Conference_Location :
Berkeley, CA
Print_ISBN :
0-7803-4354-9
DOI :
10.1109/SIM.1998.785101
