Low series resistance OMVPE grown 850 nm vertical-cavity surface-emitting lasers on p-type GaAs substrates

Author

Lei, C. ; Hodge, L.A.

Author_Institution

Div. of Opt. Commun., Hewlett-Packard Co., San Jose, CA, USA

Volume

1

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

205

Abstract

In summary, we have demonstrated high performance 850 nm GaAs DBR QW VCSELs on p-type substrates with low series resistance of 17 ohms for 22 /spl mu/m implant diameters. The current spreading can be reduced by optimizing the doping profile above the active region. Both n-side-up and p-side-up VCSELs show comparable speed response of 1.5 Gbps.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; electric resistance; gallium arsenide; infrared sources; laser cavity resonators; laser transitions; optimisation; quantum well lasers; semiconductor doping; semiconductor growth; substrates; surface emitting lasers; vapour phase epitaxial growth; 17 ohmm; 22 mum; 850 nm; GaAs; GaAs DBR QW VCSELs; OMVPE grown; active region; current spreading; doping profile optimisation; high performance; implant diameters; low series resistance; n-side-up; nm vertical-cavity surface-emitting lasers; p-side-up; p-type GaAs substrates; p-type substrates; speed response; Distributed Bragg reflectors; Gallium arsenide; Implants; Optical arrays; Optical surface waves; Substrates; Surface emitting lasers; Surface resistance; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.565199

Filename

565199