Vertical cavity lasers with Zn impurity-induced disordering (IID) defined active regions

Author

Floyd, P.D. ; Thibeault, B.J. ; Ko, J. ; Young, D.B. ; Coldren, L.A. ; Merz, J.L.

Author_Institution

Xerox Palo Alto Res. Center, CA, USA

Volume

1

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

207

Abstract

Summary form only given. In conclusion, threshold currents as low as 0.67 mA are obtained for impurity induced disordered (IID)-defined InGaAs DBR QW vertical cavity lasers (VCLs). The performance of IID-VCLs has been compared to air-gap apertured VCLs fabricated from adjacent material from the same wafer. SEM images of the active region and near-field EL measurements indicate that the Zn-IID has resulted in confinement of carriers in the lasers. Such confinement should enable the creation of smaller diameter VCLs in the future.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; electroluminescence; gallium arsenide; indium compounds; laser cavity resonators; optical fabrication; optical testing; quantum well lasers; scanning electron microscopy; semiconductor device testing; 0.67 mA; InGaAs; InGaAs DBR QW vertical cavity lasers; SEM images; VCLs; Zn; Zn impurity-induced disordering; active region; active regions; air-gap apertured VCLs; carrier confinement; impurity induced disordered; near-field EL measurements; threshold currents; vertical cavity lasers; Air gaps; Apertures; Dielectric losses; Distributed Bragg reflectors; Etching; Optical losses; Testing; Threshold current; Vertical cavity surface emitting lasers; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.565200

Filename

565200